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| BF 554 NPN High Frequency Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert NPN 250 mW SOT-23 (TO-236) 0.01 g Dimensions / Mae in mm 1=B 2=E 3=C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC ICM Tj TS Grenzwerte (TA = 25/C) BF 554 20 V 30 V 5V 250 mW 1) 30 mA 30 mA 150/C - 65...+ 150/C Characteristics (Tj = 25/C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 20 V IE = 0, VCB = 20 V, Tj = 100/C VCE = 10 V, IC = 1 mA ICB0 ICB0 hFE - - 60 Kennwerte (Tj = 25/C) Typ. - - - Max. 100 nA 10 :A 250 DC current gain - Kollektor-Basis-Stromverhaltnis 2) ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 2 01.11.2003 1 High Frequency Transistors Characteristics (Tj = 25/C) Min. Base-Emitter voltage - Basis-Emitter-Spannung 1) VCE = 10 V, IC = 1 mA Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz VCB = 10 V, IE = ie = 0, f = 1 MHz f = 200 kHz f = 1 MHz f = 100 MHz Output admittance - Ausgangs-Leitwert VCE = 10 V, IC = 1 mA, f = 0.5...10 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft hoe - RthA 4 :S fT CCB0 F F F - - - - - 250 MHz 0.6 pF 1.5 dB 1.2 dB 3 dB VBEon - 700 mV BF 554 Kennwerte (Tj = 25/C) Typ. Max. - - - - - - Collector-Base Capacitance - Kollektor-Basis-Kapazitat Noise figure - Rauschzahl at / bei VCE = 10 V, IC = 1 mA 420 K/W 2) Marking - Stempelung BF 554 = CC ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 3 |
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